amplifiers - l ine a r & p ower - chip 3 3 - 1 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 1 amplifiers - l ine a r & p ower - sm t hmc943lp5e gaas phemt mmic 1.5 watt power amplifier, 24 - 31.5 ghz v01.0511 general description features functional diagram the hm c943 lp 5 e is a four stage gaas p hem t mmi c 1.5 w att p ower amplifer which operates bet- ween 24 and 31.5 g h z. the hm c943 lp 5 e provides 21 db of gain, and +34 dbm of saturated output power and 24% p a e from a +5.5v supply. the high output ip 3 of +41 dbm makes the hm c943 lp 5 e ideal for microwave radio applications. the hm c943 lp 5 e amplifer i / o s are internally matched to 50 o hms and is packaged in a leadless q fn 5 x 5 mm surface mount package and requires no external matching components. s aturated o utput p ower: +34 dbm @ 24% p a e h igh o utput ip 3: +41 dbm h igh gain: 21 db dc s upply: +5.5v @ 1200 ma n o e xternal m atching r equired 32 l ead 5 x 5 mm sm t p ackage: 25 mm2 typical applications the hm c943 lp 5 e is ideal for: ? point-to-point radios ? point-to-multi-point radios ? vsat ? military & space electrical specifcations, t a = +25 c, vd1 = vd8 = +5.5v, idd = 1200 ma [1] p arameter m in. typ. m ax. m in. typ. m ax. units f requency r ange 24 - 26.5 26.5 - 31.5 g h z gain 18 21 16 19 db gain variation o ver temperature 0.03 0.028 db/ c i nput r eturn l oss 9 9.5 db o utput r eturn l oss 12 12 db o utput p ower for 1 db compression ( p 1db) 29 32 27 31 dbm s aturated o utput p ower ( p sat) 33 33 dbm o utput third o rder i ntercept ( ip 3) [2] 41 39 dbm total s upply current ( i dd) 1200 1200 ma [1] adjust vg1 and vg2 between -2 to 0v to achieve i dd = 1200 ma typical. [2] m easurement taken at +5.5v @ 1200 ma, p out / tone = +22 dbm
amplifiers - l ine a r & p ower - chip 3 3 - 2 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 2 hmc943lp5e v01.0511 gaas phemt mmic 1.5 watt power amplifier, 24 - 31.5 ghz input return loss vs. temperature output return loss vs. temperature broadband gain & return loss vs. frequency gain vs. temperature p1db vs. temperature p1db vs. supply voltage -30 -20 -10 0 10 20 30 20 22 24 26 28 30 32 34 36 38 s21 s11 s22 frequency (ghz) response (db) 14 18 22 26 30 23 24 25 26 27 28 29 30 31 32 33 34 +25c +85c -40c frequency (ghz) gain (db) -20 -16 -12 -8 -4 0 23 24 25 26 27 28 29 30 31 32 33 34 +25c +85c -40c return loss (db) frequency (ghz) -20 -16 -12 -8 -4 0 23 24 25 26 27 28 29 30 31 32 33 34 +25c +85c -40c return loss (db) frequency (ghz) 27 29 31 33 35 37 24 25 26 27 28 29 30 31 32 33 +25c +85c -40c p1db (dbm) frequency (ghz) 27 29 31 33 35 37 24 25 26 27 28 29 30 31 32 33 +5.0v +5.5v +6.0v p1db (dbm) frequency (ghz)
amplifiers - l ine a r & p ower - chip 3 3 - 3 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 3 amplifiers - l ine a r & p ower - sm t hmc943lp5e v01.0511 gaas phemt mmic 1.5 watt power amplifier, 24 - 31.5 ghz output ip3 vs. supply current, pout/tone = +22 dbm output ip3 vs. temperature, pout/tone = +22 dbm psat vs. supply current (idd) p1db vs. supply current (idd) psat vs. temperature psat vs. supply voltage 29 31 33 35 37 39 24 25 26 27 28 29 30 31 32 33 +25c +85c -40c psat (dbm) frequency (ghz) 29 31 33 35 37 39 24 25 26 27 28 29 30 31 32 33 +5.0v +5.5v +6.0v psat (dbm) frequency (ghz) 27 29 31 33 35 37 24 25 26 27 28 29 30 31 32 33 1000ma 1200ma 1300ma p1db (dbm) frequency (ghz) 29 31 33 35 37 39 24 25 26 27 28 29 30 31 32 33 1000ma 1200ma 1300ma psat (dbm) frequency (ghz) 25 30 35 40 45 50 24 25 26 27 28 29 30 31 32 33 +25c +85c -40c ip3 (dbm) frequency (ghz) 25 30 35 40 45 50 24 25 26 27 28 29 30 31 32 33 1000ma 1200ma 1300ma ip3 (dbm) frequency (ghz)
amplifiers - l ine a r & p ower - chip 3 3 - 4 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 4 hmc943lp5e v01.0511 gaas phemt mmic 1.5 watt power amplifier, 24 - 31.5 ghz power compression @ 24 ghz power compression @ 29 ghz output ip3 vs. supply voltage, pout/tone = +22 dbm output im3 @ vdd = +5.5v output im3 @ vdd = +6v output im3 @ vdd = +5v 25 30 35 40 45 50 27 28 29 30 31 32 33 34 +5.0v +5.5v +6.0v ip3 (dbm) frequency (ghz) 0 10 20 30 40 50 60 15 16 17 18 19 20 21 22 23 24 25 24 ghz 26 ghz 28 ghz 30 ghz 32 ghz im3 (dbc) pout/tone (dbm) 0 4 8 12 16 20 24 28 32 36 0 3 6 9 12 15 18 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 0 10 20 30 40 50 60 15 16 17 18 19 20 21 22 23 24 25 24 ghz 26 ghz 28 ghz 30 ghz 32 ghz im3 (dbc) pout/tone (dbm) 0 10 20 30 40 50 60 15 16 17 18 19 20 21 22 23 24 25 24 ghz 26 ghz 28 ghz 30 ghz 32 ghz im3 (dbc) pout/tone (dbm) 0 4 8 12 16 20 24 28 32 36 0 3 6 9 12 15 18 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm)
amplifiers - l ine a r & p ower - chip 3 3 - 5 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 5 amplifiers - l ine a r & p ower - sm t hmc943lp5e v01.0511 gaas phemt mmic 1.5 watt power amplifier, 24 - 31.5 ghz gain & power vs. supply current @ 26 ghz gain & power vs. supply voltage @ 26 ghz reverse isolation power dissipation @ 6v, 1200 ma power compression @ 32 ghz 0 4 8 12 16 20 24 28 32 36 0 3 6 9 12 15 18 21 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 15 20 25 30 35 40 1000 1100 1200 1300 gain p1db psat idd (ma) gain (db), p1db (dbm), psat (dbm) -70 -60 -50 -40 -30 -20 -10 0 27 28 29 30 31 32 33 34 +25c +85c -40c isolation (db) frequency (ghz) 15 20 25 30 35 40 5 5.5 6 gain p1db psat vdd (v) gain (db), p1db (dbm), psat (dbm) 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 11 12 13 max pdis @ 85c 25ghz 26ghz 27ghz 28ghz 29ghz 30ghz 31ghz 32ghz power dissipation (w) input power (dbm)
amplifiers - l ine a r & p ower - chip 3 3 - 6 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 6 hmc943lp5e v01.0511 gaas phemt mmic 1.5 watt power amplifier, 24 - 31.5 ghz absolute maximum ratings drain bias voltage (vd) +7v rf i nput p ower ( rfin ) +20 dbm channel temperature 150 c continuous p diss (t= 85 c) (derate 135 m w /c above 85 c) 8.8 w thermal r esistance (channel to package bottom) 7.4 c/ w s torage temperature -65 to +150 c o perating temperature -55 to +85 c es d s ensitivity ( h b m ) class 0, 150v vdd (v) idd (ma) +5.0 1200 +5.5 1200 +6.0 1200 note: amplifer will operate over full voltage ranges shown above vgg adjusted to achieve idd = 1200 ma typical supply current vs. vdd ele ct ros tat ic sensi t i v e de v ic e o b ser v e h a n d lin g pre caut ions outline drawing no tes: 1. p ackag e b o dy m at eri a l : a lu min a 2. le ad a n d g ro u n d p add le pl at in g: 30-80 mi c roin c hes g ol d o v er 50 mi c roin c hes minim u m ni ck el . 3. d imensions a re in in c hes [ millime t ers ]. 4. le ad sp ac in g t oler a n c e is non -cu m u l at i v e 5. p ackag e w a rp sh a ll not e xc ee d 0.05 mm datu m -c- 6. a ll g ro u n d le ad s a n d g ro u n d p add le m u s t b e sol d ere d to p cb rf g ro u n d. 7. c l a ssifie d a s mois tu re sensi t i v i ty le v el ( msl ) 1. p art n umber p ackage body m aterial l ead f inish msl r ating p ackage m arking [1] hm c943 lp 5 e r o hs -compliant l ow s tress i njection m olded p lastic 100% matte s n msl 1 [2] h 943 xxxx [1] 4-digit lot number xxxx [2] m ax peak refow temperature of 260 c package information
amplifiers - l ine a r & p ower - chip 3 3 - 7 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 7 amplifiers - l ine a r & p ower - sm t application circuit hmc943lp5e v01.0511 gaas phemt mmic 1.5 watt power amplifier, 24 - 31.5 ghz pin descriptions p in n umber f unction description i nterface s chematic 1, 3, 5, 8, 9, 16, 17, 20, 22, 24, 25, 32 g n d these pins and package bottom must be connected to rf /dc ground. 2, 6, 7, 14, 18, 19, 23, 27 n /c these pins are not connected internally;however, all data shown herein was measured with these pins connected to rf /dc ground externally. 4 rfin rf signal input. this pad is ac coupled and matched to 50 o hms over the operating frequency range. 10, 31 vg1, vg2 gate control for amplifer. e xternal bypass capacitors of 100 p f , 0.01 f , and 4.7 f are required on each. 11 - 13, 15, 26, 28 - 30 vd2, vd4, vd6, vd8, vd7, vd5, vd3, vd1 drain bias for the amplifer. e xternal bypass capacitors of 100 p f , 0.01 f , and 4.7 f are required on each. 21 rfo ut rf signal output. this pad is ac coupled and matched to 50 ohms over the operating frequency range.
amplifiers - l ine a r & p ower - chip 3 3 - 8 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 8 hmc943lp5e v01.0511 gaas phemt mmic 1.5 watt power amplifier, 24 - 31.5 ghz evaluation pcb list of materials for evaluation pcb 130027 [1] i tem description j1, j2 sri , k connectors j3, j4 dc p ins c1 - c10 100 p f capacitors, 0402 p kg. c11 - c20 10000 p f capacitors, 0402 p kg. c21 - c30 4.7 f capacitors, case a p kg. u1 hm c943 lp 5 e p ower amplifer p cb [2] 130025 e valuation p cb [1] r eference this number when ordering complete evaluation p cb [2] circuit board m aterial: r ogers 4350 or arlon fr 4 the circuit board used in the application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be con - nected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from h ittite upon request.
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